Classical to Quantum Transport in Multi‑Dimensional Field Effect Transistors offers a wide range of topics with attractive images and informative explanations. It begins with an exploration of the fundamentals of field effect transistor (FET) functioning, emphasizing how behavior is governed by classical models. As the semiconductor industry pushes the boundaries of miniaturization and performance, Multi-Dimensional Field Effect Transistors (MuDFETs) and emerging material platforms are redefining the foundations of modern electronics. This book offers a deep and insightful journey through the evolving landscape of advanced FET architectures—from classical conduction models to quantum and ballistic transport regimes. Authored by experts across academia and research institutions, this book offers in-depth discussions on:
- Multi-Dimensional and Junctionless FETs: Design innovations enabling superior control, scaling, and performance
- 2D Materials & Transition Metal Dichalcogenides (TMDCs): Harnessing atomically thin semiconductors for next‑generation device engineering
- Nanosheet Transistors: Unlocking new dimensions in charge transport and quantum confinement
- Charge transport mechanisms from classical, semiclassical to ballistic regimes in nanosheet and nanowire FETs
- Tunnel Field Effect Transistor (TFET)-Based Biosensors: Cutting-edge developments in label‑free, ultra-sensitive detection for healthcare and environmental monitoring
- Integration of FET platforms in nonlinear and quantum photonics using silicon nitride waveguides
Whether you’re exploring the quantum limits of device physics or developing real-world sensing solutions, this collection bridges theory and application in one compelling volume. With contributions from leading researchers and technologists, this book serves as a vital reference for academics, graduate students, and professionals working in nanoelectronics, semiconductor devices, biosensors, and photonic field.
